The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 22, 2003

Filed:

Sep. 28, 2001
Applicant:
Inventors:

Noritaka Ukiyo, Nara, JP;

Tetsuro Saito, Kanagawa, JP;

Tatsumi Shoji, Kanagawa, JP;

Makoto Iwakami, Kanagawa, JP;

Takehito Yoshino, Kyoto, JP;

Shoji Nishida, Nara, JP;

Masaaki Iwane, Nara, JP;

Masaki Mizutani, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 1/00 ; H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
C30B 1/00 ; H01L 2/120 ; H01L 2/136 ;
Abstract

A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.


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