The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jun. 09, 2000
Francis K. Chai, Gilbert, AZ (US);
Vida Ilderem Burger, Phoenix, AZ (US);
Carl S. Kyono, Tempe, AZ (US);
Sharanda L. Bigelow, Chandler, AZ (US);
Rainer Thoma, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A lateral PNP is disclosed in which a substrate of a first conductivity type is used. On top of the substrate a buried region of a second conductivity type is formed. A lightly doped collector region is located above the buried region. The lateral PNP also includes a base region of a second conductivity type formed by a graded channel implant and a well region of a second conductivity type, the well region contacting the base region, the buried region and a base contact. Additionally, there are collector contacts and emitter contacts of a first conductivity type. The lightly doped collector region results in a large Early voltage and the base region provides for a high current gain.