The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Oct. 21, 1999
Yoshihiro Kusumi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A connection hole stopper film such as the silicon nitride film is formed to directly cover a lower interconnection. A lower interlayer insulation film is formed to directly cover that connection hole stopper film. An upper interlayer insulation film differing in etching property from the lower interlayer insulation film is formed to directly cover the lower interlayer insulation film. The upper interlayer insulation film is subjected to anisotropic etching, whereby an upper interconnection trench is formed. An upper interconnection is formed in that upper interconnection trench. A semiconductor device is obtained reduced in capacitance between interconnections and variation in the interconnection resistance.