The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Aug. 31, 2000
Kurt George Steiner, Orlando, FL (US);
Susan Clay Vitkavage, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A porous insulator material and method of manufacturing. The material comprises oxygen, silicon and hydrogen characterized by a density less than 2 g/cc. Alternately, the porous insulator material is characterized by a refractive index less than 1.45 for light at a wavelength between 633 nm and 673 nm, or by a Young's modulus less than 45 GPa. A method for manufacturing a semiconductor device includes providing a semiconductor layer with an upper surface for device formation and forming multiple levels of interconnect over the semiconductor layer, each level including a plurality of members. The members are electrically isolated from other members by decomposition of TEOS to form a porous layer between at least some of the members.