The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
May. 14, 2002
Applicant:
Inventors:
Hyuk-ju Ryu, Kuri, KR;
Jong-hyon Ahn, Suwon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1119 ;
Abstract
A semiconductor device and a method for manufacturing the same are provided. The structure of a semiconductor device includes gate electrodes having a T-shaped structure comprised of first and second gate electrodes having low gate resistance and low parasitic capacitance and a halo ion-implanted region in which a short channel effect can be effectively suppressed. The method for manufacturing the device is capable of performing high angle ion implantation without extending gate-to-gate space.