The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Jul. 06, 2001
Applicant:
Inventors:
Herbert Palm, Höhenkirchen, DE;
Josef Willer, Riemerling, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H09L 2/996 ; H09L 2/994 ; H09L 3/1062 ; H09L 3/1112 ; H09L 3/1119 ;
U.S. Cl.
CPC ...
H09L 2/996 ; H09L 2/994 ; H09L 3/1062 ; H09L 3/1112 ; H09L 3/1119 ;
Abstract
An electrically conductive layer or layer sequence preferably includes a metal-containing layer applied to a metal silicide or a polysilicon layer to reduce the resistance of buried bit lines. The layer or layer sequence has been patterned in strip form so as to correspond to the bit lines and is arranged on the source/drain regions of memory transistors having an ONO memory layer sequence and gate electrodes that are arranged in trenches. The metal silicide is preferably cobalt silicide, and the metal-containing layer is preferably tungsten silicide or WN/W.