The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Jul. 14, 2000
Applicant:
Inventors:
Takashi Noguchi, Kanagawa, JP;
Yasuhiro Kanaya, Kanagawa, JP;
Masafumi Kunii, Kanagawa, JP;
Yuji Ikeda, Kanagawa, JP;
Setsuo Usui, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/904 ; H01L 2/7108 ; H01L 3/1036 ; H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/904 ; H01L 2/7108 ; H01L 3/1036 ; H01L 2/701 ;
Abstract
A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the <100> direction.