The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Sep. 28, 1998
Shiro Nakanishi, Ohgaki, JP;
Kiyoshi Yoneda, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
On a substrate, there is disposed a gate electrode having a section of a trapezoidal configuration expanded toward the substrate. The gate electrode is covered with a silicon nitride film having a thickness T of 400 Å, and a silicon oxide film having a thickness T of 1200 Åis formed on the silicon nitride film. A polycrystalline silicon film constructing an active region is formed on a gate insulating film constituted of the silicon nitride film and the silicon oxide film. By forming the silicon oxide film in a sufficient thickness of 1200 Åor more, and further forming the silicon nitride film of 400 Åor more, a thin-film transistor cannot easily be influenced by a stepped portion formed by the gate electrode, and withstanding voltage of the gate insulating film of the thin-film transistor can be enhanced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile