The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Feb. 14, 2000
Kuniyasu Nakamura, Musashino, JP;
Hiroshi Kakibayashi, Nagareyama, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In order to detect automatically at a high speed and a high probability rate the crystal defects and shape abnormalities in a specimen over a wide area of said specimen, a transmission electron microscope apparatus is employed which has an electron source, a first electrostatic lens, a second electrostatic lens, a third electrostatic lens, a first condenser lens, a second condenser lens, a pre-field objective lens, a deflection coil, a first projection lens, a second projection lens, a third projection lens, a first image shift coil, a second image shift coil, and an image acquisition apparatus, etc. The detection of crystal defects is made definite by observing the specimen image at the same location by multiple variations of the electron beam incidence direction using the deflection coil. In addition, the crystal defects are detected at a high speed by linking the deflection ratios of the deflection coil and of the first image shift coil and the second image shift coil, and carrying out compensation so that image shifts on the image acquisition apparatus due to the multiple electron beam incidence directions are mutually cancelled.