The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Mar. 29, 2001
Hideharu Itatani, Tokyo, JP;
Masayuki Tsuneda, Tokyo, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
A semiconductor manufacturing method and apparatus having an excellent step coverage and capable of manufacturing semiconductor devices at low cost. The apparatus includes a reaction chamber adapted to accommodate a substrate a gas feed port through which a raw material gas is supplied to the reaction chamber for forming ruthenium films or ruthenium oxide films on the substrate, and a gas exhaust port through which the raw material gas is exhausted from the reaction chamber. The raw material gas is directed from the gas feed port toward the substrate to initially form thereon a first ruthenium film or a first ruthenium oxide film by means of a thermal CVD method under first film-forming conditions, and subsquently to form a second ruthenium film or a second ruthenium oxide film on an underlayer of the first ruthenium film or the first ruthenium oxide film by means of the thermal CVD method under second film-forming conditions different from the first film-forming conditions, the second ruthenium film or the second ruthenium oxide film having a thickness greater than that of the first ruthenium film or the first ruthenium oxide film.