The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Jan. 16, 2001
Applicant:
Inventors:
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ; H01L 2/144 ;
Abstract
After an insulating film serving as a gate insulating film is formed on a semiconductor substrate, a titanium nitride film is deposited by chemical vapor deposition on the insulating film. Then, a tungsten film is deposited by sputtering on the titanium nitride film. Subsequently, a multilayer film composed of the tungsten film and the titanium nitride film is patterned to form a gate electrode composed of the multilayer film.