The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
May. 29, 2001
Applicant:
Inventor:
Atsushi Ogura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/131 ; H01L 2/1425 ; H01L 2/701 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/131 ; H01L 2/1425 ; H01L 2/701 ;
Abstract
A SOI substrate includes a SiO film ( ) having a center located at the depth of the damage peak where the crystal damage is maximum after the Si substrate ( ) is ion-implanted with oxygen ions. Even if a crystal defect ( ) remains at the depth of the density peak where the density is maximum, the crystal defect does not effect the device operation because it is outside the active layer. By using a low-dose SIMOX process, a lower-cost SOI substrate can be obtained wherein crystal defects formed in the active layer are reduced.