The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Apr. 20, 2001
Chih-Yu Peng, Hsinchu, TW;
Chia-Sheng Ho, Taichung, TW;
Shih-Ming Chen, Sanchung, TW;
In-Cha Hsieh, Jubei, TW;
Hannstar Display Corp., Taipei, TW;
Abstract
A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.