The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2003

Filed:

Nov. 23, 1998
Applicant:
Inventors:

Tsukasa Ooishi, Hyogo, JP;

Hiroki Shimano, Hyogo, JP;

Hideto Hidaka, Hyogo, JP;

Shigeki Tomishima, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ;
Abstract

An input protective circuit in a semiconductor integrated circuit device includes a bipolar transistor arranged for an interconnection layer. An N-type active region in the bipolar transistor is connected to an electrode of a program element. The electrode is connected to the interconnection layer. The interconnection layer supplies a high voltage for breaking a dielectric of a program element. A voltage on a P-type well is externally adjusted via a resistance element. Thereby, erroneous program due to serge entering at the interconnection layer can be avoided.


Find Patent Forward Citations

Ooishi, Tsukasa. (2003). Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same (U.S. Patent No. 6545926). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6545926

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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