The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Aug. 31, 2001
Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate
Applicant:
Inventors:
Gerd Norga, Antwerp, BE;
Dirk Wouters, Leuven, BE;
Assignee:
Interuniversitair Microelectronica Centrum (IMEC), Leuven, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 ;
U.S. Cl.
CPC ...
H01G 4/06 ;
Abstract
The present invention is related to a method, wherein a PZT layer includes a first PZT sub-layer and a second PZT sub-layer, the Ti-concentration of the first PZT sub-layer being higher than the Ti-concentration of the second PZT sub-layer.