The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2003

Filed:

Sep. 05, 2001
Applicant:
Inventors:

Tadayoshi Takada, Saitama, JP;

Osamu Kitamura, Gunma, JP;

Shigeaki Okawa, Tochigi, JP;

Hirotsugu Hata, Gunma, JP;

Chikao Fujinuma, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract

Collector regions ( ) with films capable of withstanding high voltage by laminating 4 epitaxial layers when the collector regions ( ) are formed. In order to reduce effects caused by interference between the transistors ( ) and also reduce parasitic transistor, the epitaxial layers and substrate are etched in a V-groove. Each etched region is dielectrically isolated by the poly-Si ( ).


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