The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Jan. 07, 2000
Yukio Maki, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Gate electrodes are formed on an element formation region of a silicon substrate. A sidewall insulation film having a width at least half the distance between the gate electrodes is formed on both side faces of respective gate electrodes. The distance L between the gate electrode and another gate electrode is greater than the distance between the gate electrodes. An n source region is formed in self-alignment at this region. Accordingly, a semiconductor device is obtained that has the symmetry of the characteristics of access transistors ensured and that has the contact resistance in the storage node contact reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile