The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Mar. 31, 2000
Applicant:
Inventors:
Win Chen, Fremont, CA (US);
Wen-Chiang Tu, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ; H01L 2/1302 ; H01L 2/1461 ;
Abstract
A method for etching contact openings into a polycide layer including a metal silicide layer and a polysilicon layer comprises providing a substrate that includes a polycide layer, forming a patterned photoresist mask, and etching with a series of plasmas. The etches include a silicide etch, a polycide etch including chlorine gas and nitrogen gas where the nitrogen flow rate is between 20% and about 30% of the sum of the nitrogen flow rate plus the chlorine flow rate, and a poly overetch. A polycide etch with a composition in the specified range will have a polycide selectivity greater than one.