The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Apr. 08, 2002
Applicant:
Inventor:
Joon-Yong Joo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/176 ;
Abstract
A method for forming an isolation trench in a semiconductor substrate is provided. An isolation trench is formed in a semiconductor substrate using a trench etch mask pattern. Sidewall spacers are formed on the sidewalls of the trench. A nitride liner is formed over the sidewall spacers. The trench is filled with a trench isolation material. Because the nitride liner is protected, for example, by the sidewall spacers, the formation of a dent in the nitride liner can be prevented.