The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2003

Filed:

Dec. 05, 2000
Applicant:
Inventors:

Hideaki Niimi, Hikone, JP;

Akira Ando, Omihachiman, JP;

Mitsutoshi Kawamoto, Hirakata, JP;

Masahiro Kodama, Shiga-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 ; H01C 7/02 ; H01C 7/04 ;
U.S. Cl.
CPC ...
H01B 1/08 ; H01C 7/02 ; H01C 7/04 ;
Abstract

The semiconducting ceramic material of the present invention containing BaTiO and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180° C. or more (e.g., 370° C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.


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