The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2003

Filed:

Aug. 25, 2000
Applicant:
Inventors:

Michael Geva, Allentown, PA (US);

Claude Lewis Reynolds, Jr., Sinking Spring, PA (US);

Lawrence E. Smith, Macungie, PA (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/10 ;
U.S. Cl.
CPC ...
G02B 6/10 ;
Abstract

The present invention provides an optoelectronic device and a method of manufacture therefor, that prevents dopant diffusion and controls the dopant concentration therein. The optoelectronic device includes an active region formed over a substrate, and an interface barrier layer and barrier layer located over the active region. The optoelectronic device further includes an upper cladding layer located over the interface barrier layer and the barrier layer. In an exemplary embodiment of the invention, the interface barrier layer is an indium phosphide interface barrier layer and the barrier layer is an indium gallium arsenide phosphide barrier layer.


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