logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6541842 B1

PDFFull Text
Date of Patent:
Apr. 01, 2003

Filed:

Jun. 25, 2002

Metal barrier behavior by sic:h deposition on porous materials

Applicant:
Inventors:

Herman Meynen, Lubbeek, BE;

William Kenneth Weidner, Bay City, MI (US);

Francesca Iacopi, Leuven, BE;

Stephane Malhouitre, Kessel-Lo, BE;

Assignee:

Dow Corning Corporation, Midland, MI (US);

Attorney:

Sharon K. Severance

Primary Examiner:

David Nelms

Assistant Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract

A sealing dielectric layer is applied between a porous dielectric layer and a metal diffusion barrier layer. The sealing dielectric layer closes the pores on the surface and sidewalls of the porous dielectric layer. This invention allows the use of a thin metal diffusion barrier layer without creating pinholes in the metal diffusion barrier layer. The sealing dielectric layer is a CVD deposited film having the composition Si C :H .

Find Patent Forward Citations

Meynen, Herman. (2003). Metal barrier behavior by sic:h deposition on porous materials (U.S. Patent No. 6541842). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541842

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…