The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Mar. 11, 1998
Applicant:
Inventors:
Kenji Yoshiyama, Hyogo, JP;
Motoshige Igarashi, Hyogo, JP;
Keiichi Yamada, Hyogo, JP;
Katsuya Okada, Hyogo, JP;
Keiichi Higashitani, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A semiconductor device and a manufacturing method thereof permitting the quality of gate insulating films to be prevented from deteriorating and thereby permitting electrical characteristics of the device to be prevented from deteriorating are provided. In a semiconductor device including a plurality of field effect transistors, an oxidation protection film is formed on a side of one gate electrode
Yoshiyama, Kenji. (2003). Semiconductor device including multiple field effect transistors and manufacturing method thereof (U.S. Patent No. 6541823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541823
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile