The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Aug. 20, 2001
Applicant:
Inventors:
Assignee:
Oki Data Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 2/715 ;
Abstract
An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact layer. The diffusion area is formed by solid-phase diffusion. The same mask is used to define the patterns of both the diffusion source layer and the ohmic contact layer, so that the ohmic contact layer is self-aligned with the diffusion area.
Nobori, Masaharu. (2003). Opto-electronic device with self-aligned ohmic contact layer (U.S. Patent No. 6541796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541796
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile