The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Nov. 30, 2000
Applicant:
Inventors:
Tatsuya Shimoda, Nagano-ken, JP;
Satoru Miyashita, Suwa, JP;
Shunichi Seki, Suwa, JP;
Masahiro Furusawa, Suwa, JP;
Ichio Yudasaka, Chino, JP;
Yasumasa Takeuchi, Yokohama, JP;
Yasuo Matsuki, Yokkaichi, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ;
Abstract
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as by CVD methods.