The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2003

Filed:

Jan. 29, 2002
Applicant:
Inventor:

Masanori Itoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract

A semiconductor device and a method of manufacturing the same are provided which are novel and fully improved and are capable of lowering satisfactorily a high-frequency resistance or direct current resistance in a signal line. The semiconductor device is composed of a semiconductor substrate on which predetermined circuit devices are mounted, an insulating film formed on the substrate in a manner that it covers the circuit devices and a conductive path formed on the insulating film to electrically connect the circuit devices. A concave trench is formed in a predetermined position on the semiconductor substrate and the conductive path is formed at a bottom of the concave trench in a manner that it extends along the concave trench, with interlayer dielectrics interposed between conductive layers constituting the conductive path.


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