The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6541337 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 01, 2003

Filed:

Mar. 26, 2001
Applicant:
Inventor:

Jiro Matsufusa, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract

A memory cell has a cylindrical electrode having a porous cylindrical portion, and insulating layers for making less steep the height of cylindrical electrode are provided in the peripheral circuit region. Thus a semiconductor memory device and manufacturing method thereof can be provided in which the step between the memory cell array region and the peripheral circuit region can be made less steep by a smaller number of manufacturing steps.


Find Patent Forward Citations

Matsufusa, Jiro. (2003). Semiconductor memory device and manufacturing method thereof (U.S. Patent No. 6541337). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6541337

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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