The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
May. 15, 2002
Chang-Rock Song, Kyoungki-do, KR;
Hynix Semiconductor Inc, Gyunggi-Do, KR;
Abstract
The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent treatment thereof whenever a layer is formed. The disclosure provides a method for fabricating a capacitor, including the steps of: forming a Ti Zr N layer on a substrate, wherein x is in the range of 0 to 0.5, inclusive; forming an electrode layer on the Ti Zr N layer; and forming a ZrO layer on an interface between the electrode layer and the Ti Zr N layer by performing a thermal treatment in an atmosphere containing oxygen gas, whereby a capacitor having a bottom electrode formed with the Ti Zr N layer, a dielectric layer formed with the ZrO layer, and a top electrode formed with the electrode layer is fabricated.