The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Jun. 30, 2000
Kee Jeung Lee, Seoul, KR;
Tae Hyeok Lee, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
Disclosed are a capacitor for semiconductor device capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The lower electrode is surface-treated so as to prevent generation of a natural oxide layer. An amorphous TaON layer is, as a dielectric layer, deposited on the upper part of the lower electrode. Afterwards, the amorphous TaON layer is thermal-treated in a range of maintaining its amorphous state. Next, an upper electrode is formed on the upper part of the TaON layer.