The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Dec. 26, 2001
Abstract
The present invention provides a self-aligned gate transistor. The present invention implants P-type impurity ions only below a channel region below a gate and below a source and drain electrode on semiconductor substrate having an ion implantation channel layer without implanting the P-type impurity ions into a narrow region between the source-gate and the gate-drain, deposits a gate metal and etches the gate pattern. In this case, the length (Lg) of the gate is defined to be narrower than the length (Lch-g) into which P-type impurity ions are implanted below the channel layer, thus improving a pinch-off characteristic. A method of manufacturing a field effect transistor having a self aligned gate according to the present invention comprises the steps of implanting P-type impurity ions only below a channel region below a gate and below a source and drain electrode; and depositing a refractory gate metal having a good high temperature stability to form a gate pattern using a dry etch method.