The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2003
Filed:
Jun. 11, 2001
Norio Koike, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A hot carrier lifetime of a MOS transistor is estimated depending on a hot carrier lifetime model expressed as t·∝I ·I where t is a lifetime, I is a substrate current, I is a drain current, and m is a fitting parameter. When hot carrier degradation of the MOS transistor is simulated, a parameter Age representing cumulative stress quantity with respect to the MOS transistor is calculated by a model formula expressed as Age∝∫[I ·I ]dt where t is time. As a result, a lifetime under a condition to cause maximum hot carrier degradation is estimated accurately, and a lifetime in actual use can be estimated accurately. Moreover, a hot carrier lifetime parameter can be calculated in a short time with small numbers of transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile