The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Aug. 31, 2001
Applicant:
Inventor:
Chikashi Anayama, Nakakoma, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 ;
U.S. Cl.
CPC ...
H01S 5/22 ;
Abstract
An S -type laser diode includes a p-type cladding layer formed on an active layer such that an inclined surface region thereof has a carrier concentration level of 1×10 cm or more, wherein the p-type cladding layer has a thickness of 0.35 &mgr;m or more.
Anayama, Chikashi. (2003). Laser diode and fabrication process thereof (U.S. Patent No. 6539040). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6539040
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile