The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Apr. 12, 2001
Applicant:
Inventor:
Yuji Furushima, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/227 ;
U.S. Cl.
CPC ...
H01S 5/227 ;
Abstract
An optical semiconductor device is a buried hetero structure type, and includes a semi-insulating semiconductor block layer, a carrier trap layer, and a clad layer and a contact layer. Each of the clad layer and the contact layer is formed by selective growth. The carrier trap layer and the semi-insulating block layer have an etched mesa-structure.
Furushima, Yuji. (2003). Optical semiconductor device and method of manufacturing the same (U.S. Patent No. 6539039). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6539039
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile