The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Sep. 28, 2000
Gabriel E. Tanase, Cupertino, CA (US);
Maxim Integrated Products, Inc., Sunnyvale, CA (US);
Abstract
Low voltage, high impedance current mirrors realizable in MOS or junction transistor circuits and particularly suited for use in integrated circuits. The current mirrors use first and second transistors coupled as a differential pair with a tail current that may be part of the input current to be mirrored. Another component of the input current to be mirrored is applied to the drain/collector of the first transistor of the differential pair, with the gate/base of that transistor being coupled to a bias voltage. The voltage on the drain/collector of the first transistor is effectively inverted and used to control the gate/base of the second transistor to provide a drain/collector current in the second transistor equal to the difference between the tail current and the current in the drain/collector of the first transistor. Various embodiments are disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile