The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2003

Filed:

Oct. 03, 2000
Applicant:
Inventors:

Young H. Kwark, Chappaqua, NY (US);

Dan Moy, Bethel, CT (US);

Mark B. Ritter, Danbury, CT (US);

Dennis L. Rogers, Croton on Hudson, NY (US);

Jeffrey J. Welser, Stamford, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1075 ; H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 3/1075 ; H01L 3/100 ;
Abstract

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.


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