The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
May. 10, 2002
Applicant:
Inventors:
Kazuhisa Suzuki, Hamura, JP;
Toshiro Takahashi, Hamura, JP;
Yasunobu Yanagisawa, Odawara, JP;
Yusuke Nonaka, Tachikawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 3/1119 ;
Abstract
A capacitive element C having a small leakage current is formed by utilizing a gate oxide film B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C has a gate electrode E. A part of the gate electrode E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.