The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Dec. 04, 2001
Kyong-Min Kim, Kyoungki-do, KR;
Jong-Min Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc, Kyoungki-do, KR;
Abstract
A method for forming a Ta O dielectric layer using plasma enhanced atomic layer deposition, which can improve the quality of a layer and its electric property by forming a Ta O dielectric layer using a plasma enhanced atomic layer deposition. The method for forming a Ta O dielectric layer using plasma enhanced atomic layer deposition, comprising the steps of: a) flowing Ta(OC H ) source gas in a chamber and generating plasma; b) depositing a Ta O layer by using the plasma; c) purging the chamber; d) repeatedly performing the steps a) to c) in order to form a Ta O dielectric layer; e) thermally treating the surface of the Ta O dielectric layer in an oxygen atmosphere; and f) crystallizing the Ta O dielectric layer.