The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Sep. 15, 1998
Applicant:
Inventors:
Hirotoshi Kubo, Gunma, JP;
Eiichiroh Kuwako, Gunma, JP;
Assignee:
Sanyo Electric Co., Ltd., Moriguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/122 ;
U.S. Cl.
CPC ...
H01L 2/122 ;
Abstract
The invention relates to a power MOSFET and reduction of the number of mask steps in a process of fabricating the power MOSFET. The increase of a parasitic capacitance due to the reduction is suppressed. In place of a thick insulating film , a gate insulating film is formed on the entire surface of a semiconductor substrate. The gate-drain parasitic capacitance which uses the gate insulating film as a dielectric is suppressed by forming a removal region EL.