The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Dec. 17, 1999
Kyung-Eon Lee, Suwon-shi, KR;
Sung-Ki Kim, Seoul, KR;
LG. Philips LCD Co., Ltd., Seoul, KR;
Abstract
A polysilicon film is formed by using a small quantity of metal and the contamination of the silicon film due to the metal is minimized. Moreover, the silicon crystallization is simplified since the polysilicon film is formed by MIC using a single layer of silicon containing the catalytic substance for the crystallization. The method of forming the polysilicon film includes the steps of forming a silicon layer containing a catalyst for silicon crystallization and crystallizing the silicon layer. The method further includes the steps of forming an amorphous silicon layer between the substrate and the silicon layer and crystallizing the silicon layer and the amorphous silicon layer.