The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
May. 01, 2002
Applicant:
Inventors:
Shiou-han Liaw, Hsinchu, TW;
Hong-ming Yang, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
The present invention relates to a method for forming a static random access memory (SRAM) cell. In order to avoid constantly reducing operating voltage of the SRAM cell affecting the unit stability and noise jamming of the SRAM cell during read/write processes, the invention employs different thicknesses of gate oxide layers of an access transistor and a pull down transistor. Thereby, not only the &bgr; ratio is increased, but also the unit area is decreased.
Liaw, Shiou-han. (2003). Fabrication method of static random access memory cell (U.S. Patent No. 6537878). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6537878
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