The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Aug. 16, 2001
Kazuyuki Inokuchi, Tokyo, JP;
Seiichi Takahashi, Tokyo, JP;
Shinichi Hoshi, Tokyo, JP;
Tadashi Saito, Tokyo, JP;
Nobusuke Yamamoto, Tokyo, JP;
Yuko Itoh, Tokyo, JP;
Nobumasa Higemoto, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.