The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Oct. 17, 2001
Ki-Hyun Lyu, Kyongki-do, KR;
Kwang-Jo Hwang, Kyongki-do, KR;
LG.Philips LCD Co., LTD, Seoul, KR;
Abstract
A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile