The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Mar. 23, 2000
Applicant:
Inventors:
Koji Arita, Osaka, JP;
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Larry D. McMillan, Colorado Springs, CO (US);
Masamichi Azuma, Shiga, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.