The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Feb. 23, 2001
Applicant:
Inventors:
Francimar Campana, Milipitas, CA (US);
Srinivas Nemani, San Jose, CA (US);
Michael Chapin, Fremont, CA (US);
Shankar Venkataraman, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/632 ;
U.S. Cl.
CPC ...
C23C 1/632 ;
Abstract
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.
Campana, Francimar. (2003). Method of depositing low dielectric constant silicon carbide layers (U.S. Patent No. 6537733). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6537733
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile