The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
Jan. 31, 2001
Applicant:
Inventor:
David Y. Chan, Austin, TX (US);
Assignee:
Photronics, Inc., Brookfield, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G01R 2/708 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G01R 2/708 ;
Abstract
A method for measuring critical dimensions on photomasks, and more specifically to a method for measuring critical dimensions on photomasks using an electrical test structure. The test structure may be comprised of a cross resistor for van der Pauw sheet resistance measurements, a bridge resistor , and a split-bridge resistor
Chan, David. (2003). Electrical critical dimension measurements on photomasks (U.S. Patent No. 6537708). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6537708
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