The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Apr. 10, 2001
Toshiaki Fukunaga, Kaisei-machi, JP;
Kenji Matsumoto, Kaisei-machi, JP;
Mitsugu Wada, Kaisei-machi, JP;
Fuji Photo Film Co., Ltd., Kanagawa-Ken, JP;
Abstract
A semiconductor laser element capable of reducing an element resistance and producing a beam of high quality includes: an n-Ga Al N composition gradient layer provided between an n-GaN contact layer and an n-Ga Al N/GaN superlattice clad layer; an n-Ga Al N composition gradient layer provided between the n-Ga Al N/GaN superlattice clad layer and an n- or i-Ga Al N optical waveguide layer; a p-Ga Al N composition gradient layer provided between a p- or i-Ga Al N optical waveguide layer and a p-Ga Al N superlattice gradient layer; and a p-Ga Al N composition gradient layer provided between a p-Ga Al N/GaN superlattice upper clad layer and a p-GaN contact layer. Z4 of the n-Ga Al N composition gradient layer is continuously changed from 0 to a composition corresponding to the band gap of the Ga Al N/GaN superlattice clad layer. Z5 in the Ga Al N composition gradient layer is continuously changed from z2 to a composition corresponding to the band gap of the Ga Al N/GaN superlattice clad layer.