The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Jun. 13, 2002
Paul H. OuYang, San Jose, CA (US);
Donald Liusie, San Jose, CA (US);
DMEL Incorporated, Santa Clara, CA (US);
Abstract
The rate of discharge of the sense amplifier and bit lines in a memory circuit is controlled to simulate a boosted sense ground potential without requiring the use of a voltage regulator or precharged capacitors. The sense amplifier is electrically coupled to ground through a large transistor during a first period, which quickly discharges the sense amplifier toward ground potential to ensure a fast sense speed of the sense amplifier. During a subsequent period, the large transistor is turned off and the sense amplifier is electrically coupled to ground through a smaller transistor. The small transistor slowly discharges the sense amplifier towards ground, without reaching ground, until the active cycle is over and the discharge of the sense amplifier is terminated. By holding the sense amplifier above, but near, ground potential, the subthreshold leakage of non-selected memory cells is minimized so that the frequency of refresh may be decreased, thereby minimizing standby current.