The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2003

Filed:

Dec. 18, 2001
Applicant:
Inventor:

Ming Yin, San Jose, CA (US);

Assignee:

Sun Microsystems, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 1/90175 ;
U.S. Cl.
CPC ...
H03K 1/90175 ;
Abstract

A circuit includes a drive transistor coupled between an output and a first potential, a constant current circuit coupled between the gate of the drive transistor and a second potential, and a compensation circuit coupled between the gate of the drive transistor and the first potential. The constant current circuit draws a current from the gate of the drive transistor to the second potential that is substantially independent of process and temperature variations, and therefore turns on the drive transistor at a constant rate, regardless of process and temperature variations. The compensation circuit draws a small current from the gate of the drive transistor to the first potential that is dependent upon process and temperature variations of the drive transistor, and therefore reduces the discharge rate of the gate of the drive transistor according to process and temperature variations of the drive transistor.


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