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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6534921 B1

PDFFull Text
Date of Patent:
Mar. 18, 2003

Filed:

Nov. 09, 2000

Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system

Applicant:
Inventors:

Sang-Hun Seo, Taejon, KR;

Kyeong-Koo Chi, Seoul, KR;

Ji-Soo Kim, Yongin, KR;

Chang-Woong Chu, Suwon, KR;

Seung-Pil Chung, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Kyungki-do, KR;

Attorney:

Lee & Sterba, P.C.

Primary Examiner:

Don Wong

Assistant Examiner:

Tuyet T Vo

Int. Cl.
CPC ...
H01J 7/24 ;
U.S. Cl.
CPC ...
H01J 7/24 ;
Abstract

A method of removing metal-containing polymeric material and ion implanted or plasma damaged photoresist from a surface using a plasma jet system, by generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma, and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

Find Patent Forward Citations

Seo, Sang-Hun. (2003). Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system (U.S. Patent No. 6534921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6534921

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