The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Nov. 02, 2001
Applicant:
Inventor:
Alfred W. Morse, Ellicott City, MD (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/306 ; H01L 2/315 ; H01L 2/302 ;
U.S. Cl.
CPC ...
H01L 2/306 ; H01L 2/315 ; H01L 2/302 ;
Abstract
A high power transistor structure comprised of a plurality of field effect transistors fabricated in parallel on a common semiconductor chip and wherein the gate electrodes of the field effect devices are in the form of parallel finger elements having a variable pitch between the fingers which decreases uniformly or non-uniformly from a central portion of the cell to opposite outer end portions thereof.
Morse, Alfred. (2003). Thermally balanced power transistor (U.S. Patent No. 6534857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6534857
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile